Journal
JOURNAL OF CRYSTAL GROWTH
Volume 368, Issue -, Pages 67-71Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2013.01.022
Keywords
Growth rate; Surface morphology; Ammonothermal crystal growth; Single crystal growth; Bulk GaN; Nitrides
Funding
- National Science Foundation Graduate Research Fellowship (NSF-GRFP) [DGE-0707460]
- U.S. Department of Homeland Security (DHS) Graduate Student Fellowship Program under DOE [DE-AC05-06OR2310]
- National Science Foundation [DMR-0906805]
- Solid State Lighting and Display/Energy Center at University of California, Santa Barbara
- MRL Central Facilities
- MRSEC Program of the NSF [DMR 1121053]
- NSF
- Direct For Mathematical & Physical Scien [0906805] Funding Source: National Science Foundation
- Division Of Materials Research [0906805] Funding Source: National Science Foundation
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GaN crystals were grown on hydride vapor phase epitaxy (HVPE) GaN seed crystals with non-polar surface orientations varying between on-axis m-plane and a-plane using the basic ammonothermal method. Three different surface morphology regimes were observed with the surface features including mounds, slate-like morphologies, and pyramidal 'spikes' composed of (0001) and non-polar microfacets. A macroscopic off-orientation of the non-steady-state surface and newly appearing steady-state growth surfaces towards [0001] by approximately 1 degrees was observed with geometric constraints suggesting an off-orientation of the observed {10-10} microfacets towards [000 (1) over bar] by approximately 1 or greater. (C) 2013 Elsevier B.V. All rights reserved.
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