Journal
JOURNAL OF CRYSTAL GROWTH
Volume 343, Issue 1, Pages 13-16Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2011.12.075
Keywords
Crystal structure; Metalorganic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; Light emitting diodes
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We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation. (C) 2012 Elsevier B.V. All rights reserved.
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