Journal
JOURNAL OF CRYSTAL GROWTH
Volume 351, Issue 1, Pages 83-87Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2012.04.016
Keywords
Defect; Planar defect; Hydride vapor phase epitaxy; Gallium compounds
Funding
- MKE (the Ministry of Knowledge Economy), Korea, under the ITRC (Information Technology Research Center)
- NIPA (National IT Industry Promotion Agency) [NIPA-2010-C1090-1021-0015]
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The growth and annihilation mechanism of pit type defects in HVPE grown thick GaN films was studied using a cross sectional cathodoluminescence (CL) technique. Two kinds of pit type defects were distinguished by their morphology: the hexagonal V-pit surrounded by {10-11} facets and the U-pit with {10-11} facets having a blunt bottom. It was found that the V-pit originated from different growth rates between (0001) plane and {10-11} facet, and was filled and annihilated by {10-12} facets' growth, namely U-pit generation. The formation of U-pit may play an important role in annihilation of pit type defects. (c) 2012 Elsevier B.V. All rights reserved.
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