Journal
JOURNAL OF CRYSTAL GROWTH
Volume 338, Issue 1, Pages 47-51Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2011.10.041
Keywords
Nanostructures; Metal-organic vapor phase epitaxy; Selective epitaxy; Semiconducting III-V materials; Semiconducting ternary compounds
Funding
- MEXT, Japan
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Indium-rich InGaAs nanowires were grown on an InP (111)B substrate by catalyst-free selective-area metal-organic vapor phase epitaxy, and the growth-temperature dependence of growth rate and composition was studied. In particular, nanowire growth rate rapidly decreases as growth temperature increases. This tendency is opposite (for a similar temperature range) to that found in a previous study on selective-area growth of gallium-rich InGaAs nanowires. This difference between indium-rich and gallium-rich nanowires suggests that the influence of growth temperature on the growth of InGaAs nanowires is dependent on the group-III supply ratio. On the basis of previous experimental observations in InAs and GaAs nanowires, temperature dependence of nanowire growth rate and its dependence on group-III supply ratio are predicted. A guideline to determine the optimum growth conditions of InGaAs nanowires is also discussed. (C) 2011 Elsevier B.V. All rights reserved.
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