Response-time-improved ZnO scintillator by impurity doping

For direct observation of ultrafast laser pulses or dynamics, a fast scintillator in the short-wavelength-method-grown ZnO can be controlled by doping with impurity ions. By changing the composition of the starting materials, a 15 ps response time was achieved with an indium-doped ZnO crystal, thus making it the fastest scintillator in the ultraviolet and extreme ultraviolet regions. This scintillator would open-up new possibilities in applications using ultrafast sources, including accurate timing synchronization for pump-probe experiments using X-ray free electron laser. (C) 2010 Elsevier B.V. All rights reserved.