Journal
JOURNAL OF CRYSTAL GROWTH
Volume 332, Issue 1, Pages 21-26Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2011.07.021
Keywords
Crystal structure; Nanostructures; Planar defects; Molecular beam epitaxy; Semiconducting III-V materials; Nanowire
Funding
- Natural Sciences and Engineering Research Council (NSERC) of Canada
- Ontario Centres of Excellence
Ask authors/readers for more resources
Transmission electron microscopy (TEM) studies are presented for Au-assisted vapor-liquid-solid (VLS) nanowire growth of gallium arsenide/gallium phosphide (GaAs/GaP) axial heterostructures. The supersaturation of the liquid Au-III-V alloy droplet during MBE growth was found to have a profound impact on both the crystal phase and growth rate of the nanowire heterostructures. Among these effects was the appearance of a previously unreported 4H GaP crystal phase. 4H GaP occurred at low Au-III-V droplet supersaturation following the transition from GaAs to GaP growth. Both crystal phase and growth rate were different for GaAs and GaP, underlining the importance of group V elements in Au-III-V droplet supersaturation and thus VLS nanowire growth. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available