Journal
JOURNAL OF CRYSTAL GROWTH
Volume 312, Issue 19, Pages 2683-2688Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2010.06.024
Keywords
Molecular beam epitaxy; GaN on silicon; Nitrides; High electron mobility transistor; Light emitting diode
Ask authors/readers for more resources
The growth of GaN based structures on Si(1 1 0) substrates by molecular beam epitaxy using ammonia as the nitrogen precursor is reported. The structural, optical and electrical properties of such structures are assessed and are quite similar to the ones obtained on Si(1 1 1) in-spite of the very different substrate surface symmetry. A threading dislocation density of 3.7 x 10(9) cm(-2) is evaluated by transmission electron microscopy, which is in the low range of typical densities obtained on up to 2 mu m thick GaN structures grown on Si(1 1 1). To assess the potential of such structure for device realization, AlGaN/GaN high electron mobility transistor and InGaN/GaN light emitting diode heterostructures were grown and their properties are compared with the ones obtained on Si(1 1 1). (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available