Journal
JOURNAL OF CRYSTAL GROWTH
Volume 312, Issue 8, Pages 1228-1232Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.12.021
Keywords
Characterizations; Bridgman growth; Halides; Semiconducting indium compound
Funding
- Division Of Astronomical Sciences
- Direct For Mathematical & Physical Scien [0849736] Funding Source: National Science Foundation
- Division Of Human Resource Development
- Direct For Education and Human Resources [932038] Funding Source: National Science Foundation
- Division Of Human Resource Development
- Direct For Education and Human Resources [930018] Funding Source: National Science Foundation
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We have developed a procedure to purify, synthesize and grow InI single crystals using the Bridgman technique. The commercial product of InI from Alfa Aesar (99.998% InI or 4 N) was zone refined by 50 passes of a zone-heater at 420 degrees C, traveling at 2 cm/h (the melting point of InI is 360 degrees C). InI was also synthesized using high purity In and I-2 by vapor transport technique. The grown InI single crystal showed a clear band edge excitonic emission around 2.02 eV at 6 K using photoluminescence ;measurement. The resistivities of InI detectors were found to be similar to 2 x 10(9) and 1 x 10(8) Omega cm for zone refined and vapor synthesized starting materials, respectively. The InI detector formed by Pd-Pd contact showed clear peak of alpha particle detection at room temperature using Am-241 source. (C) 2009 Elsevier B.V. All rights reserved.
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