4.4 Article

Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers

Journal

JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 18, Pages 4356-4359

Publisher

ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.07.030

Keywords

Phase separation; Solar-blind; Molecular beam epitaxy; MgZnO; ZnO

Funding

  1. National Science Foundation [50532090, 60606023, 60621091, 10804126]
  2. Ministry of Science and Technology of China [2007CB936203, 2009CB929400]
  3. Research Council of Norway through the FRINAT Understanding ZnO project

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A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content quasi-homo buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry. (C) 2009 Elsevier B.V. All rights reserved.

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