Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 10, Pages 3015-3018Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.01.052
Keywords
X-ray diffraction; Ammonothermal crystal growth; Growth from solutions; Gallium nitride
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In this work, results of structural characterization of high-quality ammonothermal GaN are presented. Besides expected low dislocation density (being of the order of 10(3) cm(-2)) the most interesting feature seems perfect flatness of the crystal lattice of studied crystals. Regardless the size of crystals, lattice curvature radius exceeds 100 m,whereas bettercrystals reveal radius of several hundred meters and the best above 1000 m. Excellent crystallinity manifests in very narrow X-ray diffraction peaks of full-width at half-maximum (FWHM) values about 16 arcsec. (C) 2009 Elsevier B.V. All rights reserved.
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