Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 8, Pages 2265-2268Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.02.033
Keywords
Interfaces; Molecular beam epitaxy; Alloys; Nitrides; Magnetic materials; Semiconducting Materials
Funding
- Department of Energy, Office of Basic Energy Sciences [DE-FG02-06ER46317]
- National Science Foundation [0730257]
- U.S. Department of Energy (DOE) [DE-FG02-06ER46317] Funding Source: U.S. Department of Energy (DOE)
- Office Of Internatl Science &Engineering
- Office Of The Director [0730257] Funding Source: National Science Foundation
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Ferromagnetic delta-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(0 0 1) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epitaxial relationship of manganese gallium with respect to scandium nitride is determined to be [1 0 0](MnGa)//[1 1 0](ScN) and [1 1 0](MnGa)//[1 0 0](ScN). Vibrating sample magnetometry measurements indicate out-of-plane magnetization of the film, suggesting strong magnetic anisotropy along the manganese gallium c-axis. (C) 2009 Elsevier B.V. All rights reserved.
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