Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 7, Pages 1662-1665Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.11.068
Keywords
Characterization; Molecular beam epitaxy; Nitrides; Semiconducting III-V materials
Funding
- Natural Sciences and Engineering Research Council (NSERC) of Canada
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The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into account multiple reflections within the GaAsN layer and GaAs substrate. This allowed the extraction of bandedge parameters for a series of GaAsN films with N content varying from 0.24% to 1.4% N. All films show a clear Urbach absorption edge with a composition-dependent bandgap consistent with literature and Urbach slope parameters roughly 3 times larger than GaAs values. (C) 2008 Elsevier B.V . All rights reserved.
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