Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 7, Pages 1935-1938Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.10.037
Keywords
Photoluminescence; Molecular beam epitaxy; Quantum wells; Arsenides
Funding
- 973 program of China [2006CB604]
- NSFC [60876034]
Ask authors/readers for more resources
A group of AlInGaAs/InGaAs/InAs strain compensated triangular quantum well samples have been grown by using gas source molecular beam epitaxy (GSMBE), and their properties are investigated by X-ray diffraction and photoluminescence (PL) measurements. Through the adjustment of the growth temperature and barrier width, the quality of the quantum wells has been improved distinctly. The maximal PL peak wavelength of 2.38 mu m at 300 K has been reached. The X-ray diffraction measurements show good structural properties and the full-width at half-maximum (FWHM) of PL spectrum is 17 meV at 12 K and 33 meV at 300 K. For the sample with larger well width, the transition involving the second sub-energy levels occurs. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available