Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 14, Pages 3577-3580Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.06.002
Keywords
Diffusion; Doping; Molecular beam epitaxy; Semiconducting II-VI materials
Funding
- NNSFC [50532050, 10674133, 10774132, 60776011]
- 973 program [2008CB317105, 2006CI3604906]
- Chinese Academy of Sciences
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Undoped zinc oxide (ZnO) films have been prepared on sapphire substrates in a molecular beam epitaxy technique, and the films were annealed in air ambient along with a GaAs wafer. Arsenic in the GaAs wafer will evaporate, and enter into the ZnO films. In this facile way, arsenic-doped p-ZnO has been obtained. Hall measurements reveal that the hole concentration and Hall mobility of the ZnO:As films obtained in this way can reach 3.7 x 10(17) cm(-3) and 2.8 cm(2) V-1 S-1, respectively. X-ray photoelectron spectroscopy confirms the incorporation of arsenic into the ZnO films. The activation energy of the acceptors derived from temperature-dependent Hall measurement is about 164 meV. (C) 2009 Elsevier B.V. All rights reserved.
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