Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 14, Pages 3563-3567Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.04.027
Keywords
High resolution X-ray diffraction; Interfaces; Organometallic vapor phase epitaxy; Quantum wells; Superlattices; Antimonides
Funding
- Natural Sciences and Engineering Research Council of Canada
- Engineering and Physical Sciences Research Council [EP/C51596X]
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We report the OMVPE growth and characterization of InAsSb/InAs strain balanced multiple quantum wells lattice-matched to GaSb substrates for potential application as mid-infrared detectors for wavelengths beyond 4 mu m. Detailed transmission electron microscopy measurements were performed to evaluate the degree of Ga and Sb intermixing at the GaSb/InAsSb and InAs/InAsSb interfaces. Photoluminescence emission up to 5 mu m was observed for superlattice structures with only 15% antimony. The dependence of PL on wavelength is red shifted compared to expectations based on type I band alignment. (C) 2009 Elsevier B.V. All rights reserved.
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