Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 14, Pages 3731-3736Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2009.04.034
Keywords
X-ray diffraction; Heteroepitaxy; Pulsed laser deposition; Metals; Oxides; Yttrium compounds
Funding
- STREP Project NANO-MESH [NMP4-Cr-2004-013817]
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In the present work we have grown twin-free single crystal metal films of iridium (Ir), rhodium (Rh), platinum (Pt) and ruthenium (Ru) on silicon (1 1 1) substrates via an yttria-stabilized zirconia (YSZ) buffer layer. A prerequisite for the realisation of heteroepitaxial metal films without additional texture components was the twin-free deposition of the YSZ films by pulsed laser deposition (PLD). For the metal films on top, a novel two-step growth process was applied with an extremely low deposition rate for the first 20 nm. For all metals, a drastic texture improvement by up to a factor of 9 could be observed compared to the oxide buffer layer. Minimum values were 0.18 degrees (Ir) and 0.12 degrees (Rh) for tilt and twist, respectively. For all four metals investigated, twin-free epitaxial films could be grown on YSZ/Si(1 1 1) whereas the twinning problem for platinum films was solved by decoupling the Pt-YSZ interface via an additional iridium interlayer. The grown metal/YSZ/Si(1 1 1) multilayer samples offer the possibility to integrate a variety of interesting nanostructures and functional materials on silicon. They are now available in 4 in wafer size. (C) 2009 Elsevier B.V. All rights reserved.
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