Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 23, Pages 5119-5122Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.07.061
Keywords
Nanowires; Metalorganic vapor phase epitaxy; Antimonides; Gallium compounds
Ask authors/readers for more resources
We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available