Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 23, Pages 4920-4922Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.08.038
Keywords
Metalorganic vapor phase-epitaxy; Gallium compounds; Nitrides; Semiconducting III-V materials
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We Succeeded in growing almost completely relaxed, high-quality, thick GaInN films on an m-plane GaN template with grooves along the < 0 0 0 1 > direction, using lateral-growth technology. Reciprocal space mapping of asymmetrical X-ray diffraction confirmed almost complete relaxation. By transmission electroscopic characterization, the growth of GaInN film with a threading dislocation density of approximately 1 x 10(8) cm(-2) was confirmed. (C) 2008 Elsevier B.V. All rights reserved.
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