Journal
JOURNAL OF CRYSTAL GROWTH
Volume 310, Issue 21, Pages 4503-4506Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2008.07.108
Keywords
Characterization; Reflection high-energy electron diffraction; Molecular beam epitaxy; Oxides; Zinc compounds; Semiconducting II-VI materials
Funding
- National Science Council of the Republic of China, Taiwan, [NSC 95-2112-M-033-008-MY3]
- National Nano-Device Lab
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This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement. (c) 2008 Elsevier B.V. All rights reserved.
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