Journal
JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 431, Issue -, Pages 42-49Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2014.05.023
Keywords
Photocatalysis; Heterojunction; Nanosheets; Graphite-like carbon nitride; Non-covalent doping
Categories
Funding
- National Natural Science Foundation of China [51272220, 11204262, 11275163, 11374252]
- National Basic Research Program of China [2012CB921303]
- Open Fund based on the innovation platform of Hunan Colleges and Universities [12K045]
- Guangdong - Hong Kong Technology Cooperation Funding Scheme (TCFS) [GHP/015/12SZ]
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A proof of concept integrating binary p-n heterojunctions into a semiconductor hybrid photocatalyst is demonstrated by non-covalent doping of graphite-like carbon nitride (g-C3N4) with ultrathin GO and MoS2 nanosheets using a facile sonochemical method. In this unique ternary hybrid, the layered MoS2 and GO nanosheets with a large surface area enhance light absorption to generate more photoelectrons. On account of the coupling between MoS2 and GO with g-C3N4, the ternary hybrid possesses binary p-n heterojunctions at the g-C3N4/MoS2 and g-C3N4/GO interfaces. The space charge layers created by the p-n heterojunctions not only enhance photogeneration, but also promote charge separation and transfer of electron-hole pairs. In addition, the ultrathin MoS2 and GO with high mobility act as electron mediators to facilitate separation of photogenerated electron-hole pairs at each p-n heterojunction. As a result, the ternary hybrid photocatalyst exhibits improved photoelectrochemical and photocatalytic activity under visible light irradiation compared to other reference materials. The results provide new insights into the large-scale production of semiconductor photocatalysts. (C) 2014 Elsevier Inc. All rights reserved.
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