4.7 Article

The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots

Journal

JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 346, Issue 2, Pages 347-351

Publisher

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2010.03.030

Keywords

Type-II quantum dots; Core-shell; InP; CdSe; Bandgap

Funding

  1. National Research Foundation of Korea (NRF) [2009-0067322]
  2. Priority Research Centers [2009-0093826]
  3. Gangreung center of Korea Basic Science Institution for lifetime decay measurement
  4. Ministry of Knowledge Economy, Republic of Korea
  5. National Research Foundation of Korea [2009-0067322] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. (C) 2010 Elsevier Inc. All rights reserved.

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