Journal
JOURNAL OF CHEMICAL PHYSICS
Volume 133, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3460798
Keywords
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Funding
- NSFC [10804002]
- MOST [2007CB936202, 2009CB623703]
- National Found for Fostering Talents of Basic Science (NFFTBS) [J0630311]
- Research Fund for the Doctoral Program
- Central Universities
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To enhance performances of graphene/SiO2 based field-effect transistors (FETs), understanding of the transfer of carriers through the graphene/SiO2 interface is crucial. In this paper, we have studied the temperature dependent transfer characters of graphene FETs. Hysteresis loop is shown to be dominated by trapping/detrapping carriers through the graphene/SiO2 interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3460798]
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