Journal
JOURNAL OF CHEMICAL PHYSICS
Volume 130, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3080767
Keywords
II-VI semiconductors; interface states; nanostructured materials; photoluminescence; semiconductor heterojunctions; wide band gap semiconductors; XANES; zinc compounds
Funding
- NSERC
- CFI
- OIT
- CRC of Canada
- SRC
- University of Wisconsin-Madison
- NSF [DMR-0537588]
- CSRF
- NSERC MFA
- Office of Basic Energy Sciences [DE-AC02-06CH11357]
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The electronic structure and optical properties of biaxial ZnO-ZnS heterostructure nanoribbons (NRs) have been investigated using x-ray absorption near-edge structures (XANES) and x-ray excited optical luminescence (XEOL). The XANES were recorded in total electron yield and wavelength-selected photoluminescence yield across the K- and L-3,L-2-edges of zinc and sulfur and the K-edge of oxygen. The XEOL from the NRs exhibit a very weak band-gap emission at 392 nm and two intense defect emissions at 491 and 531 nm. The synchrotron x-ray pulse (similar to 100 ps, 153 ns repetition rate) was used to track the optical decay dynamics from ZnO-ZnS NR, which can be described by two lifetimes (7.6 and 55 ns). Comparison with similar measurements for ZnO and ZnS nanowires reveals that the luminescence from ZnO-ZnS NRs was dominated by the ZnO component of the NR as the ZnS component contributes little. The implication of this observation is discussed.
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