4.7 Article

Optical emission of biaxial ZnO-ZnS nanoribbon heterostructures

Journal

JOURNAL OF CHEMICAL PHYSICS
Volume 130, Issue 8, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3080767

Keywords

II-VI semiconductors; interface states; nanostructured materials; photoluminescence; semiconductor heterojunctions; wide band gap semiconductors; XANES; zinc compounds

Funding

  1. NSERC
  2. CFI
  3. OIT
  4. CRC of Canada
  5. SRC
  6. University of Wisconsin-Madison
  7. NSF [DMR-0537588]
  8. CSRF
  9. NSERC MFA
  10. Office of Basic Energy Sciences [DE-AC02-06CH11357]

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The electronic structure and optical properties of biaxial ZnO-ZnS heterostructure nanoribbons (NRs) have been investigated using x-ray absorption near-edge structures (XANES) and x-ray excited optical luminescence (XEOL). The XANES were recorded in total electron yield and wavelength-selected photoluminescence yield across the K- and L-3,L-2-edges of zinc and sulfur and the K-edge of oxygen. The XEOL from the NRs exhibit a very weak band-gap emission at 392 nm and two intense defect emissions at 491 and 531 nm. The synchrotron x-ray pulse (similar to 100 ps, 153 ns repetition rate) was used to track the optical decay dynamics from ZnO-ZnS NR, which can be described by two lifetimes (7.6 and 55 ns). Comparison with similar measurements for ZnO and ZnS nanowires reveals that the luminescence from ZnO-ZnS NRs was dominated by the ZnO component of the NR as the ZnS component contributes little. The implication of this observation is discussed.

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