Journal
NATURE PHOTONICS
Volume 9, Issue 4, Pages 247-252Publisher
NATURE RESEARCH
DOI: 10.1038/NPHOTON.2015.23
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Funding
- Air Force Office of Scientific Research [FA9550-14-1-0277]
- National Science Foundation (NSF) [ECCS-1351002]
- NSF through the National Nanotechnolgy Infrastructure Network (NNIN) programme
- Characterization Facility
- NSF
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [1351002] Funding Source: National Science Foundation
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Layered two-dimensional materials have demonstrated novel optoelectronic properties and are well suited for integration in planar photonic circuits. Graphene, for example, has been utilized for wideband photodetection. However, because graphene lacks a bandgap, graphene photodetectors suffer from very high dark current. In contrast, layered black phosphorous, the latest addition to the family of two-dimensional materials, is ideal for photodetector applications due to its narrow but finite bandgap. Here, we demonstrate a gated multilayer black phosphorus photodetector integrated on a silicon photonic waveguide operating in the near-infrared telecom band. In a significant advantage over graphene devices, black phosphorus photodetectors can operate under bias with very low dark current and attain an intrinsic responsivity up to 135 mAW(-1) and 657 mAW(-1) in 11.5-nm- and 100-nm-thick devices, respectively, at room temperature. The photocurrent is dominated by the photovoltaic effect with a high response bandwidth exceeding 3 GHz.
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