Journal
NATURE PHOTONICS
Volume 9, Issue 2, Pages 88-92Publisher
NATURE PORTFOLIO
DOI: 10.1038/NPHOTON.2014.321
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Funding
- Swiss National Science Foundation (SNF)
- European Community [619509]
- BMBF project UltraLowPow [16ES0060 K]
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Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently(1), because Si and the chemically well-matched Ge are indirect-bandgap semiconductors. To overcome this drawback, several routes have been pursued, such as the all-optical Si Raman laser(2) and the heterogeneous integration of direct-bandgap III-V lasers on Si3-7. Here, we report lasing in a direct-bandgap group IV system created by alloying Ge with Sn-8 without mechanically introducing strain(9,10). Strong enhancement of photoluminescence emerging from the direct transition with decreasing temperature is the signature of a fundamental direct-bandgap semiconductor. For T <= 90 K, the observation of a threshold in emitted intensity with increasing incident optical power, together with strong linewidth narrowing and a consistent longitudinal cavity mode pattern, highlight unambiguous laser action(11). Direct-bandgap group IV materials may thus represent a pathway towards the monolithic integration of Si-photonic circuitry and complementary metal-oxide-semiconductor (CMOS) technology.
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