Journal
NATURE NANOTECHNOLOGY
Volume 10, Issue 3, Pages 270-276Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NNANO.2014.323
Keywords
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Funding
- National Basic Research Program of China (973 Program) [2011CB921802, 2013CB921902]
- NSF of China [11034001, 11190021]
- 'Strategic Priority Research Program (B)' of the Chinese Academy of Sciences [XDB04040100]
- NRF of Korea grant - MEST(QMMRC) [R11-2008-053-01002-0]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4413]
- Max Planck POSTECH/KOREA Research Initiative Program through the NRF of Korea - MEST [2011-0031558]
- National Research Foundation of Korea [2015R1A5A6001948, CG031502, 2011-0031558] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.
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