Related references
Note: Only part of the references are listed.A new spin on magnetic memories
Andrew D. Kent et al.
NATURE NANOTECHNOLOGY (2015)
Spin Hall effect clocking of nanomagnetic logic without a magnetic field
Debanjan Bhowmik et al.
NATURE NANOTECHNOLOGY (2014)
Basic principles of STT-MRAM cell operation in memory arrays
A. V. Khvalkovskiy et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2013)
Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories
Katsumasa Kamiya et al.
PHYSICAL REVIEW B (2013)
Non-volatile spin switch for Boolean and non-Boolean logic
Supriyo Datta et al.
APPLIED PHYSICS LETTERS (2012)
An Ultra-Low Reset Current Cross-Point Phase Change Memory With Carbon Nanotube Electrodes
Jiale Liang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Phase Change Memory
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Storage-class memory: The next storage system technology
R. F. Freitas et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
Overview of candidate device technologies for storage-class memory
G. W. Burr et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
Nanoionics-based resistive switching memories
RaineR Waser et al.
NATURE MATERIALS (2007)