Journal
NATURE MATERIALS
Volume 14, Issue 10, Pages 1020-+Publisher
NATURE RESEARCH
DOI: 10.1038/NMAT4384
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Funding
- Ministry of Science and Technology of China [2013CB921902, 2012CB927401, 2011CB922202]
- NSFC [11227404, 11274228, 11174199, 11374206, 11134008, 91421312, 91221302]
- Shanghai Committee of Science and Technology, China [12JC1405300, 13QH1401500]
- NSF [DMR-1305677]
- FAME
- MARCO
- DARPA
- Top-notch Young Talents Program
- Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning
- Shanghai Municipal Education Commission
- Shanghai Education Development Foundation
- Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics [KF201310]
- Shanghai Pujiang Program [14PJ1404600]
- Offce of Science, Offce of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
- ENN
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Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.
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