Journal
NATURE MATERIALS
Volume 15, Issue 2, Pages 154-+Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/NMAT4488
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Funding
- Swiss NSF [PP00P2_133552, PA00P21-36420]
- ERC project 'TopoMat' [306504]
- NCCR-MARVEL
- Deutsche Forschungsgemeinschaft (DFG) [IS 250/1-1]
- Director, Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
- Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
- Swiss National Supercomputing Centre (CSCS) [s515]
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Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs; refs 3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs (refs 17-19). However, both the conceptual richness of Z(2) classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z(2) topological insulator is theoretically predicted and experimentally confirmed in the beta-phase of quasi-one-dimensional bismuth iodide Bi4I4. The electronic structure of beta-Bi4I4, characterized by Z(2) invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the (M) over bar point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.
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