Journal
JOURNAL OF APPLIED PHYSICS
Volume 124, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5032244
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Funding
- JSPS KAKENHI [16H03828]
- Visegrad Group (V4)-Japan Joint Research Project on Advanced Materials NaMSeN
- Kawanishi Memorial ShinMaywa Education Foundation
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We report a forming-free resistive switching using a solution-processed silicon nanocrystal (Si NC) thin film. A Si NC thin film is formed on an ITO/glass substrate by spin-coating a colloidal Si NC solution in air. The Si NC thin film shows bipolar resistive switching without a forming process. Electrical characteristics at low temperatures and in various gas environments suggest that a non-swichiometric SiOx shell on Si NCs contributes to the resistive switching. We propose that the origin of the resistive switching is a conductive filament of oxygen vacancies on the SiOx shell by an electric field. Published by AIP Publishing.
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