Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863260
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Funding
- FIRST program from JSPS
- Research and Development for Next-Generation Information Technology of MEXT
- Grants for Excellent Graduate Schools of MEXT
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We investigate in-plane current-induced magnetization reversal under an in-plane magnetic field in Hall bar shaped devices composed of Ta/CoFeB/MgO structures with perpendicular magnetic easy axis. The observed relationship between the directions of current and magnetization switching and Ta thickness dependence of magnetization switching current are accordance with those for magnetization reversal by spin transfer torque originated from the spin Hall effect in the Ta layer. (C) 2014 AIP Publishing LLC.
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