4.6 Article

Experimental and theoretical studies of band gap alignment in GaAs1-xBix/GaAs quantum wells

Journal

JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 23, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4904740

Keywords

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Funding

  1. NCN [2012/07/E/ST3/01742]
  2. Diamond grant from the MNiSzW

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Band gap alignment in GaAs1-xBix/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory in which the supercell based calculations are combined with the alchemical mixing approximation applied to a single atom in a supercell. In PR spectra, the optical transitions related to the excited states in the QW (i.e., the transition between the second heavy-hole and the second electron subband) were clearly observed in addition to the ground state QW transition and the GaAs barrier transition. This observation is clear experimental evidence that this is a type I QW with a deep quantum confinement in the conduction and valence bands. From the comparison of PR data with calculations of optical transitions in GaAs1-xBix/GaAs QW performed for various band gap alignments, the best agreement between experimental data and theoretical calculations has been found for the valence band offset of 52 +/- 5%. A very similar valence band offset was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into GaAs host modifies both the conduction and the valence band. For GaAs1-xBix with 0 < x < 0.074, the conduction band shifts lineary at a rate of similar to 33 meV per % Bi, which only slightly decreases with Bi concentration. Whereas the valance band shift is clearly non-linear. Reducing initially at a rate of similar to 51 meV per % Bi for low concentrations of Bi and then at a significantly reduced rate of similar to 20 meV per % Bi near the end of the studied composition range. The overall reduction rate of the band gap is parabolic and the reduction rates change from similar to 84 to similar to 53 meV per % Bi for lower and higher Bi concentrations, respectively. The calculated shifts of valence and conduction bands give the variation of valence (conduction) band offset between GaAs1-xBix and GaAs in the range of similar to 60%-40% (similar to 40%-60%), which is in good agreement with our conclusion derived from PR measurements. (C) 2014 AIP Publishing LLC.

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