Related references
Note: Only part of the references are listed.Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells
D. Rosales et al.
JOURNAL OF APPLIED PHYSICS (2014)
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
Pierre Corfdir et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Optical studies of strain and defect distribution in semipolar (1(1)over-bar01) GaN on patterned Si substrates
N. Izyumskaya et al.
JOURNAL OF APPLIED PHYSICS (2013)
Excitons in nitride heterostructures: From zero- to one-dimensional behavior
D. Rosales et al.
PHYSICAL REVIEW B (2013)
History of Gallium-Nitride-Based Light-Emitting Diodes for Illumination
Shuji Nakamura et al.
PROCEEDINGS OF THE IEEE (2013)
Effect of MOCVD growth conditions on the optical properties of semipolar (1(1)over-bar01) GaN on Si patterned substrates
N. Izyumskaya et al.
GALLIUM NITRIDE MATERIALS AND DEVICES VII (2012)
Exciton radiative properties in nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells
L. Beaur et al.
PHYSICAL REVIEW B (2011)
Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures
P. Corfdir et al.
PHYSICAL REVIEW B (2011)
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
Patrick Rinke et al.
PHYSICAL REVIEW B (2008)
Strain-induced polarization in wurtzite III-nitride semipolar layers
A. E. Romanov et al.
JOURNAL OF APPLIED PHYSICS (2006)
Share Paper
