Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4863338
Keywords
-
Categories
Funding
- Poland's National Science Centre [DEC-2011/01/N/ST3/04382, DEC-2011/01/B/ST3/00526]
- PL-grid infrastructure
Ask authors/readers for more resources
It is shown that charge transfer, the process analogous to formation of semiconductor p-n junction, contributes significantly to adsorption energy at semiconductor surfaces. For the processes without the charge transfer, such as molecular adsorption of closed shell systems, the adsorption energy is determined by the bonding only. In the case involving charge transfer, such as open shell systems like metal atoms or the dissociating molecules, the energy attains different value for the Fermi level differently pinned. The Density Functional Theory (DFT) simulation of species adsorption at different surfaces, such as SiC(0001) or GaN(0001) confirms these predictions: the molecular adsorption is independent on the coverage, while the dissociative process adsorption energy varies by several electronvolts. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available