Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4861646
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Funding
- Natural Sciences and Engineering Research Council of Canada
- U.S. Army (ARL) [W911NF-07-2-0046, W56HZV-06-C-0228]
- U.S. Army (TACOM/TARDEC) [W911NF-07-2-0046, W56HZV-06-C-0228]
- U.S. National Science Foundation through GOALI [MR-0907385]
- II-VI Foundation
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Capacitance-voltage (C-V) and Deep-Level-Transient Spectroscopy (DLTS) measurements were performed on Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H-SiC with the SiO2 layer grown by Sodium-Enhanced Oxidation. This technique has yielded 4H-SiC MOS transistors with record channel mobility, although with poor bias stability. The effects of the mobile positive charge on the C-V characteristics and DLTS spectra were investigated by applying a sequence of positive and negative bias-temperature stresses, which drifted the sodium ions toward and away from the SiO2/4H-SiC interface, respectively. Analytical modeling of the C-V curves shows that the drift of sodium ions in the SiO2 layer during the voltage sweep can explain the temperature dependence of the C-V curves. The effects of lateral fluctuations of the surface potential (due to a non-uniform charge distribution) on the inversion layer mobility of MOS transistors are discussed within a two-dimensional percolation model. (C) 2014 AIP Publishing LLC.
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