Journal
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4896402
Keywords
-
Categories
Funding
- National Natural Science Foundation of China (NSFC) [11032010]
- NSFC [61274107]
- 973 Program [2012CB326404]
- Hunan Provincial NSFC [13JJ2023]
Ask authors/readers for more resources
We present the effects of an amorphous ZrO2 layer on the TiO2-based bipolar resistive switching memory device where the ZrO2 layer plays an important role as a supplementary reservoir of oxygen vacancies. Compared with Pt/TiO2/Pt monolayer device, a remarkably improved uniformity of switching parameters such as switching voltages and resistances in high/low states is demonstrated in the Pt/ZrO2/TiO2/Pt system. The resistive switching mechanism of memory devices incorporating the ZrO2/TiO2 bilayer structure can be attributed to multiple conducting filaments through the occurrence of redox reactions at the ZrO2/TiO2 surface. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available