Journal
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4886895
Keywords
-
Categories
Funding
- European Union
- Free State of Saxony
- EFRE [SAB 100132251]
Ask authors/readers for more resources
We present X-ray diffraction and Raman spectroscopy investigations of (InxGa1-x)(2)O-3 thin films and bulk-like ceramics in dependence of their composition. The thin films grown by pulsed laser deposition have a continuous lateral composition spread allowing the determination of phonon mode properties and lattice parameters with high sensitivity to the composition from a single 2-in. wafer. In the regime of low indium concentration, the phonon energies depend linearly on the composition and show a good agreement between both sample types. We determined the slopes of these dependencies for eight different Raman modes. While the lattice parameters of the ceramics follow Vegard's rule, deviations are observed for the thin films. Further, we found indications of the high-pressure phase InGaO3 II in the thin films above a critical indium concentration, its value depending on the type of substrate. (C) 2014 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available