Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4878236
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Funding
- National Natural Science Foundation of China [61350012, 51202057]
- China Postdoctoral Science Foundation [20110490994]
- Foundation of He'nan Educational Committee [12A480001]
- Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTHN) [2012IRTSTHN004]
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The polycrystalline BaTiO3 (BTO) thin films were grown on F-doped SnO2 substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and NDR disappears when no positive bias is applied, while both RS and NDR behaviors improve when increasing the positive bias. The electrons trapped/detrapped by interface states at Au/BTO interface are proposed to understand the above behaviors. (C) 2014 AIP Publishing LLC.
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