Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4862845
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We demonstrate interface energy level engineering, exploiting the modification in energy band structure across Verwey transition temperature (T-V) of Fe3O4, in a Fe3O4(111)/Alq(3)/Co spin-valve (SV). I-V characteristics exhibit a transition in conduction mode from carrier injection to tunneling across T-V of Fe3O4 electrode. Both giant magneto-resistance (GMR) and tunneling MR (TMR) have been observed in a single SV, below and above T-V, respectively. We have achieved room-temperature SV operation in our device. We believe that the tuning of charge gap at Fermi level across T-V resulting in a corresponding tuning of conduction mode and a unique cross over from GMR to TMR. (C) 2014 AIP Publishing LLC.
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