Related references
Note: Only part of the references are listed.Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
Simone Bertolazzi et al.
ACS NANO (2013)
Manipulation of the graphene surface potential by ion irradiation
O. Ochedowski et al.
APPLIED PHYSICS LETTERS (2013)
Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications
Kartik Ganapathi et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors
Alfonso Alarcon et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
High Performance Multilayer MoS2 Transistors with Scandium Contacts
Saptarshi Das et al.
NANO LETTERS (2013)
Hysteresis in Single-Layer MoS2 Field Effect Transistors
Dattatray J. Late et al.
ACS NANO (2012)
Ion irradiation tolerance of graphene as studied by atomistic simulations
E. H. Ahlgren et al.
APPLIED PHYSICS LETTERS (2012)
Effect of SiO2 substrate on the irradiation-assisted manipulation of supported graphene: a molecular dynamics study
Shijun Zhao et al.
NANOTECHNOLOGY (2012)
Electronic transport signatures of common defects in irradiated graphene-based systems
I. Deretzis et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2012)
Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
Hannu-Pekka Komsa et al.
PHYSICAL REVIEW LETTERS (2012)
Accurate Measurement of Electron Beam Induced Displacement Cross Sections for Single-Layer Graphene
Jannik C. Meyer et al.
PHYSICAL REVIEW LETTERS (2012)
Unzipping and folding of graphene by swift heavy ions
S. Akcoeltekin et al.
APPLIED PHYSICS LETTERS (2011)
Channel-Length-Dependent Transport Behaviors of Graphene Field-Effect Transistors
Shu-Jen Han et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Mega-electron-volt proton irradiation on supported and suspended graphene: A Raman spectroscopic layer dependent study
S. Mathew et al.
JOURNAL OF APPLIED PHYSICS (2011)
Effective mobility of single-layer graphene transistors as a function of channel dimensions
Archana Venugopal et al.
JOURNAL OF APPLIED PHYSICS (2011)
Single ion induced surface nanostructures: a comparison between slow highly charged and swift heavy ions
Friedrich Aumayr et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
How Good Can Monolayer MoS2 Transistors Be?
Youngki Yoon et al.
NANO LETTERS (2011)
Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies
L. G. Cancado et al.
NANO LETTERS (2011)
A role for graphene in silicon-based semiconductor devices
Kinam Kim et al.
NATURE (2011)
Single-layer MoS2 transistors
B. Radisavljevic et al.
NATURE NANOTECHNOLOGY (2011)
Atomistic simulations of the implantation of low-energy boron and nitrogen ions into graphene
E. H. Ahlgren et al.
PHYSICAL REVIEW B (2011)
Quantifying ion-induced defects and Raman relaxation length in graphene
M. M. Lucchese et al.
CARBON (2010)
Enhanced resistance of single-layer graphene to ion bombardment
J. J. Lopez et al.
JOURNAL OF APPLIED PHYSICS (2010)
Ion and electron irradiation-induced effects in nanostructured materials
A. V. Krasheninnikov et al.
JOURNAL OF APPLIED PHYSICS (2010)
Intrinsic doping and gate hysteresis in graphene field effect devices fabricated on SiO2 substrates
P. Joshi et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2010)
Raman study of ion-induced defects in N-layer graphene
Ado Jorio et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2010)
Graphene transistors
Frank Schwierz
NATURE NANOTECHNOLOGY (2010)
SRIM - The stopping and range of ions in matter (2010)
James F. Ziegler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
Effects of ion bombardment on a two-dimensional target: Atomistic simulations of graphene irradiation
O. Lehtinen et al.
PHYSICAL REVIEW B (2010)
Evolution of the Raman spectra from single-, few-, and many-layer graphene with increasing disorder
E. H. Martins Ferreira et al.
PHYSICAL REVIEW B (2010)
Atomically Thin MoS2: A New Direct-Gap Semiconductor
Kin Fai Mak et al.
PHYSICAL REVIEW LETTERS (2010)
Operation of Graphene Transistors at Gigahertz Frequencies
Yu-Ming Lin et al.
NANO LETTERS (2009)
Dielectric Screening Enhanced Performance in Graphene FET
Fang Chen et al.
NANO LETTERS (2009)
Giant intrinsic carrier mobilities in graphene and its bilayer
S. V. Morozov et al.
PHYSICAL REVIEW LETTERS (2008)
Ultrahigh electron mobility in suspended graphene
K. I. Bolotin et al.
SOLID STATE COMMUNICATIONS (2008)
Creation of multiple nanodots by single ions
Ender Akcoeltekin et al.
NATURE NANOTECHNOLOGY (2007)
Raman spectrum of graphene and graphene layers
A. C. Ferrari et al.
PHYSICAL REVIEW LETTERS (2006)
Two-dimensional gas of massless Dirac fermions in graphene
KS Novoselov et al.
NATURE (2005)
Double-resonant Raman scattering in graphite: Interference effects, selection rules, and phonon dispersion
J Maultzsch et al.
PHYSICAL REVIEW B (2004)
Coulomb explosion and thermal spikes
EM Bringa et al.
PHYSICAL REVIEW LETTERS (2002)
Doable resonant Raman scattering in graphite
C Thomsen et al.
PHYSICAL REVIEW LETTERS (2000)