Related references
Note: Only part of the references are listed.Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p-Type Schottky-Like Pt/Bi1-dFeO3 Interfaces
Atsushi Tsurumaki et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Potential barrier increase due to Gd doping of BiFeO3 layers in Nb:SrTiO3-BiFeO3-Pt structures displaying diode-like behavior
H. Khassaf et al.
APPLIED PHYSICS LETTERS (2012)
Direct observation of ferroelectric polarization-modulated band bending at oxide interfaces
B. C. Huang et al.
APPLIED PHYSICS LETTERS (2012)
Effect of ferroelectric parameters on ferroelectric diodes
Chen Ge et al.
JOURNAL OF APPLIED PHYSICS (2012)
The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O3 thin films with bottom SrRuO3 electrode
L. Pintilie et al.
JOURNAL OF APPLIED PHYSICS (2012)
Polarization dependence of Schottky barrier heights at interfaces of ferroelectrics determined by photoelectron spectroscopy
Feng Chen et al.
PHYSICAL REVIEW B (2012)
Interface control of bulk ferroelectric polarization
P. Yu et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2012)
Mechanism of the Switchable Photovoltaic Effect in Ferroelectric BiFeO3
H. T. Yi et al.
ADVANCED MATERIALS (2011)
A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
An Quan Jiang et al.
ADVANCED MATERIALS (2011)
Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures
Chen Ge et al.
APPLIED PHYSICS LETTERS (2011)
Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films
Can Wang et al.
APPLIED PHYSICS LETTERS (2011)
Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects
D. Lee et al.
PHYSICAL REVIEW B (2011)
PbTiO3/SrTiO3 interface: Energy band alignment and its relation to the limits of Fermi level variation
Robert Schafranek et al.
PHYSICAL REVIEW B (2011)
Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO3 thin films
Zheng Wen et al.
APPLIED PHYSICS LETTERS (2010)
Interface depolarization field as common denominator of fatigue and size effect in Pb(Zr0.54Ti0.46)O3 ferroelectric thin film capacitors
R. Bouregba et al.
JOURNAL OF APPLIED PHYSICS (2010)
Energy band alignment between Pb(Zr,Ti)O3 and high and low work function conducting oxides-from hole to electron injection
F. Chen et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Ferroelectric Schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O3-Ta structure
Lucian Pintilie et al.
PHYSICAL REVIEW B (2010)
Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO3-SrRuO3 capacitors
L. Pintilie et al.
APPLIED PHYSICS LETTERS (2009)
Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
T. Choi et al.
SCIENCE (2009)
Rectifying current-voltage characteristics of BiFeO3/Nb-doped SrTiO3 heterojunction
H. Yang et al.
APPLIED PHYSICS LETTERS (2008)
The influence of the top-contact metal on the ferroelectric properties of epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 thin films
Lucian Pintilie et al.
JOURNAL OF APPLIED PHYSICS (2008)
Ferroelectrics go bananas
J. F. Scott
JOURNAL OF PHYSICS-CONDENSED MATTER (2008)
Very large spontaneous electric polarization in BiFeO3 single crystals at room temperature and its evolution under cycling fields
D. Lebeugle et al.
APPLIED PHYSICS LETTERS (2007)
Band gap and Schottky barrier heights of multiferroic BiFeO3
S. J. Clark et al.
APPLIED PHYSICS LETTERS (2007)
Short-circuit photocurrent in epitaxial lead zirconate-titanate thin films
L. Pintilie et al.
JOURNAL OF APPLIED PHYSICS (2007)
Ferroelectric polarization-leakage current relation in high quality epitaxial Pb(Zr, Ti)O3 films
L. Pintilie et al.
PHYSICAL REVIEW B (2007)
Rectifying I-V characteristic of LiNbO3/Nb-doped SrTiO3 heterojunction
S. M. Guo et al.
APPLIED PHYSICS LETTERS (2006)
Interface-induced phenomena in polarization response of ferroelectric thin films
A. K. Tagantsev et al.
JOURNAL OF APPLIED PHYSICS (2006)
Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single-crystalline films
Ionela Vrejoiu et al.
ADVANCED MATERIALS (2006)
Interface effect on ferroelectricity at the nanoscale
CG Duan et al.
NANO LETTERS (2006)
Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties
L Pintilie et al.
JOURNAL OF APPLIED PHYSICS (2005)
Metal-ferroelectric-metal structures with Schottky contacts.: II.: Analysis of the experimental current-voltage and capacitance-voltage characteristics of Pb(Zr,Ti)O3 thin films -: art. no. 123104
L Pintilie et al.
JOURNAL OF APPLIED PHYSICS (2005)
Transient-current measurement of the trap charge density at interfaces of a thin-film metal/ferroelectric/metal structure
LA Delimova et al.
APPLIED PHYSICS LETTERS (2005)
Dielectric functions and electronic band structure of lead zirconate titanate thin films -: art. no. 094108
H Lee et al.
JOURNAL OF APPLIED PHYSICS (2005)
Ferroelectric-like hysteresis loop in nonferroelectric systems
L Pintilie et al.
APPLIED PHYSICS LETTERS (2005)
Temperature dependence of the current conduction mechanisms in ferroelectric Pb(Zr0.53,Ti0.47)O3 thin films
TPC Juan et al.
JOURNAL OF APPLIED PHYSICS (2004)
Asymmetrical leakage currents as a possible origin of the polarization offsets observed in compositionally graded ferroelectric films
R Bouregba et al.
JOURNAL OF APPLIED PHYSICS (2003)
Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel
I Boerasu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Energy levels of point defects in SrTiO3 and related oxides
J Robertson
JOURNAL OF APPLIED PHYSICS (2003)