Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4818433
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Funding
- French Ministry of Research
- National Computational Center for Higher Education (CINES) [c2011085015]
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The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material. (C) 2013 AIP Publishing LLC.
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