Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4825317
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We report on low-temperature (4 K) photoluminescence of an 8.3% efficient Cu2ZnSnS4 photovoltaic device. Measurements were recorded as a function of excitation intensity, and the evolution of the resulting spectra is discussed. The spectra indicate that the radiative recombination is characteristic of heavily compensated material with a high quasi donor-acceptor pair density, as determined by the relationship between peak height, peak position, and excitation intensity, as well as the carrier lifetimes at different wavelengths. The blue-shift of the defect-derived peak position is used to estimate the quasi donor-acceptor pair spacing and density. The data indicate an average pair spacing of roughly 3.3 nm, yielding an overall total radiative-defect density of similar to 1.3 x 10(19) cm(-3). (C) 2013 AIP Publishing LLC.
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