Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 15, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4824828
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Funding
- Semiconductor Research Corporation (SRC)
- Defense Advanced Research Project Agency (DARPA) through STARnet Center for Function Accelerated nanoMaterial Engineering (FAME)
- National Science Foundation (NSF)
- SRC Nanoelectronic Research Initiative (NRI) [2204.001, NSF ECCS-1124733, NEB-2020]
- NSF [NSF CCF-1217382]
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Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in graphene via quantum confinement or surface functionalization have not resulted in a breakthrough. Here we show that the negative differential resistance experimentally observed in graphene field-effect transistors of conventional design allows for construction of viable non-Boolean computational architectures with the gapless graphene. The negative differential resistance-observed under certain biasing schemes-is an intrinsic property of graphene, resulting from its symmetric band structure. Our atomistic modeling shows that the negative differential resistance appears not only in the drift-diffusion regime but also in the ballistic regime at the nanometer-scale-although the physics changes. The obtained results present a conceptual change in graphene research and indicate an alternative route for graphene's applications in information processing. (C) 2013 AIP Publishing LLC.
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