4.6 Article

Nonvolatile AND, OR, and NOT Boolean logic gates based on phase-change memory

Journal

JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 23, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4852995

Keywords

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Funding

  1. National Natural Science Foundation of China [61376130]
  2. International Science & Technology Cooperation Program of China [2010DFA11050]
  3. National High-tech R&D Program (863 Program) of China [2011AA010404]
  4. Fundamental Research Funds for the Central Universities [HUST: 0118182046]

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Electronic devices or circuits that can implement both logic and memory functions are regarded as the building blocks for future massive parallel computing beyond von Neumann architecture. Here we proposed phase-change memory (PCM)-based nonvolatile logic gates capable of AND, OR, and NOT Boolean logic operations verified in SPICE simulations and circuit experiments. The logic operations are parallel computing and results can be stored directly in the states of the logic gates, facilitating the combination of computing and memory in the same circuit. These results are encouraging for ultralow-power and high-speed nonvolatile logic circuit design based on novel memory devices. (C) 2013 AIP Publishing LLC.

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