Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4837615
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Funding
- UK-EPSRC [EP/H005587/1, EP/H050787/1]
- Technology Strategy Board ETOE-2 project [TP-341 AF045L]
- EU-FP7 BIANCHO project
- Engineering and Physical Sciences Research Council [EP/H050787/1, EP/H005587/1, EP/G064725/1] Funding Source: researchfish
- EPSRC [EP/H050787/1, EP/H005587/1, EP/G064725/1] Funding Source: UKRI
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We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3-0.8 eV (1.5-4 mu m) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (Delta(SO)) is large and controllable and can, for example, be made larger than the band gap (E-g) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices. (C) 2013 AIP Publishing LLC.
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