Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4813079
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Funding
- National Science Foundation (NSF) awards Electrical, Communications and Cyber Systems (ECCS) [1001431]
- Division of Material Research (DMR) [1206919, ECCS-1253720]
- Defense Advanced Research Project Agency (DARPA) [D11PC20027]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1001431] Funding Source: National Science Foundation
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We present a systematic study of morphology evolution of [1 (1) over bar 00] m-plane GaN grown by plasma-assisted molecular beam epitaxy on free-standing m-plane substrates with small miscut angles towards the -c [000 (1) over bar] and +c [0001] directions under various gallium to nitrogen (Ga/N) ratios at substrate temperatures T = 720 degrees C and T = 740 degrees C. The miscut direction, Ga/N ratio, and growth temperature are all shown to have a dramatic impact on morphology. The observed dependence on miscut direction supports the notion of strong anisotropy in the gallium adatom diffusion barrier and growth kinetics. We demonstrate that precise control of Ga/N ratio and substrate temperature yields atomically smooth morphology on substrates oriented towards _c [0001] as well as the more commonly studied -c [000 (1) over bar] miscut substrates. (C) 2013 AIP Publishing LLC.
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