Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4857035
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Funding
- Sao Paulo Research Foundation (FAPESP)) [2009/51740-9]
- CNPq [302640/2010-0]
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It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states. (C) 2013 AIP Publishing LLC.
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