Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4816794
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Funding
- IT R&D program of MKE/KEIT [10039200]
- IC Design Education Center (IDEC)
- Nanofab Facility for Nanotech RD
- Future-based Technology Development Program (Nano fields) through National Research Foundation of Korea (NRF) [20110030200]
- Ministry of Science, ICT & Future Planning
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Resistive switching characteristics of single-crystalline CuO nanowires grown by thermal oxidation was investigated. The compressive stress developed in Cu2O layer prevented further oxidation of Cu and caused CuO nanowire growth, which was driven by the total Gibbs free energy minimization. CuO nanowire with Pt electrode showed Ohmic below 1.1 V and space charge limited current above 1.1 V, while that with Cu electrode showed resistive switching characteristics with sufficient Cu ions to form the metallic filaments from the electrodes. (C) 2013 AIP Publishing LLC.
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