Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4818477
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Funding
- DOE/NETL Solid-State Lighting Program [DE-FC26-0NT20286]
- DOE, Office of Basic Energy Sciences [DE-AC36-08GO28308]
- National Science Foundation [DMR-08-19762]
- Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF)
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We demonstrate amber-green emission from AlxIn1-xP light-emitting diodes (LEDs) with luminescence peaked at 566 nm and 600 nm. The LEDs are metamorphically grown on GaAs substrates via a graded InyGa1-yAs buffer layer and feature electron confinement based on the control of AlxIn1-xP CuPt atomic ordering. A control sample fabricated without order-disorder carrier confinement is used to illustrate device improvement up to a factor of 3 in light output due to confinement at drive currents of 40 A/cm(2). The light output at room temperature from our AlxIn1-xP LED structure emitting at 600 nm is 39% as bright as a GaxIn1-xP LED emitting at 650 nm. (C) 2013 AIP Publishing LLC.
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